| 摘要 |
PROBLEM TO BE SOLVED: To provide not only a method of simply and accurately forming a thin film without using resist, but also a method of manufacturing a semiconductor device at low cost. SOLUTION: The method of manufacturing the semiconductor device includes the steps of forming a first layer on a substrate, forming a peeling layer 113 on the first layer 102, selectively irradiating a laser beam to the peeling layer from the side thereof to reduce the adhesiveness of part of the peeling layer, removing the peeling layer with the reduced adhesiveness to selectively etch the first layer that allows the left peeling layer to be a mask, forming the peeling layer on the substrate, and selectively irradiating a first laser beam to at least the peeling layer to reduce the adhesiveness of part thereof. Further, the method includes the steps of removing the peeling layer with the reduced adhesiveness, forming the first layer on the left peeling layer, irradiating a second laser beam to the left peeling layer to reduce the adhesiveness thereof, and removing the left peeling layer and the first layer adjacent thereto. COPYRIGHT: (C)2008,JPO&INPIT |
