| 摘要 |
PROBLEM TO BE SOLVED: To improve the durability life of a vapor phase epitaxial growth device by reducing self-heat generation of a vacuum pump during a cleaning operation of the vapor phase epitaxial growth device where the vapor phase epitaxial growth device has a high risk of damage, and to make it possible to use an inexpensive sealing member. SOLUTION: When cleaning the vapor phase epitaxial growth device is carried out using cleaning gas such as ClF<SB>3</SB>gas, the number of revolutions of a vacuum exhaust pump is decreased, thus reducing the self-heating value due to adiabatic compression of the vacuum exhaust pump. COPYRIGHT: (C)2008,JPO&INPIT
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