发明名称 |
Method for manufacturing silicon carbide semiconductor device |
摘要 |
A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.
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申请公布号 |
US2008153216(A1) |
申请公布日期 |
2008.06.26 |
申请号 |
US20080071186 |
申请日期 |
2008.02.19 |
申请人 |
DENSO CORPORATION;HITACHI, LTD. |
发明人 |
KUMAR RAJESH;YAMAMOTO TSUYOSHI;NAKAMURA HIROKI;MORISHITA TOSHIYUKI;OHYANAGI TAKASUMI;WATANABE ATSUO |
分类号 |
H01L21/82;H01L21/04;H01L21/336;H01L27/098;H01L27/10;H01L29/06;H01L29/24;H01L29/78;H01L29/808 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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