| 摘要 |
A semiconductor device having a test pattern for measuring epitaxial pattern shift is provided. The test pattern includes a semiconductor substrate having a first pattern formed therein; a first impurity region formed in the semiconductor substrate; an epitaxial layer formed on the semiconductor substrate, the epitaxial layer having a second pattern formed therein, wherein the second pattern corresponds to the first pattern; and a second impurity region formed in the epitaxial layer, the second impurity region in electrical contact with the first impurity region.
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