| 摘要 |
The invention relates to the production of electronic components on a thinned semiconductor substrate. In order to realise a connection stud on the back surface of the thin substrate, the method comprises the following: forming an integrated circuit on a non-thinned substrate in which a portion of a polycrystalline silicon layer (18) is provided for realizing the stud. The circuit is transferred onto a transfer substrate (30) and its back surface is thinned. An opening is formed in the thinned semiconductive layer (12) in order to access the polycrystalline silicon, aluminium (80) is deposited, and the layer is etched in order to define a stud in contact with the inner interconnections of the integrated circuit via the polycrystalline silicon. Application for image sensors on thinned silicon. |
