CHEMICAL MECHANICAL POLISHING METHOD AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE USING THE SAME

摘要

A chemical mechanical polishing method and a method of fabricating a semiconductor device using the same are provided to reduce surface energy of an activation solution by adding a surface active agent. A CMP(Chemical Mechanical Polishing) device including a polishing pad and a polishing head is provided(S1). A polishing target loading process is performed to load a polishing target into a polishing head(S2). A polishing activation solution supply process is performed to supply a polishing activation solution including a surface active agent on a polishing pad(S3). A compressing process is performed to compress the polishing target by using a polishing pad(S4). The polishing target and the polishing pad are rotated relatively to each other.