发明名称 CMOS TRANSISTOR
摘要 A CMOS transistor comprises a substrate with a gate electrode arranged thereon between source and drain regions. A capacitor is provided on the gate electrode and a voltage applied to the gate electrode is dropped across a stack, including the gate electrode and the capacitor.
申请公布号 US2008149982(A1) 申请公布日期 2008.06.26
申请号 US20070961877 申请日期 2007.12.20
申请人 TEXAS INSTRUMENTS DEUTSCHLAND GMBH 发明人 JUMPERTZ REINER;SCHIMPF KLAUS;BOGEN STEFAN
分类号 H01L27/07 主分类号 H01L27/07
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