| 摘要 |
PROBLEM TO BE SOLVED: To efficiently remove an unnecessary material deposited at a circumferential edge of a wafer in a wafer process step. SOLUTION: A wafer 20 is placed on a susceptor 31 of a chamber 30. A treatment gas is led from an introduction nozzle 33 into the chamber 30 and exhausted from an exhaust port 32. An introduction speed and an exhaustion speed of the treatment gas are adjusted by electromagnetic valves 33a, 32a to keep gas pressure within the chamber 30 within a proper range. A high frequency current is supplied to a coil antenna 35 provided outside a top plate 30b, and a doughnut-shaped plasma P is generated within the chamber 30. The susceptor 31 is moved up and down by an elevator 36, distribution of the plasma P is adjusted relatively to the wafer 20, the circumferential edge of the wafer 20 is wrapped within the plasma P, and the unnecessary material deposited there is removed by etching. COPYRIGHT: (C)2008,JPO&INPIT |
