发明名称 |
Nanoelectronic structure and method of producing such |
摘要 |
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
|
申请公布号 |
US2008149914(A1) |
申请公布日期 |
2008.06.26 |
申请号 |
US20070812226 |
申请日期 |
2007.06.15 |
申请人 |
QUNANO AB |
发明人 |
SAMUELSON LARS IVAR;SVENSSON PATRIK;OHLSSON JONAS;LOWGREN TRULS |
分类号 |
H01L21/20;H01L29/06 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|