| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon carbide sintered compact free from warp, and to provide a method for producing the same. <P>SOLUTION: The method for producing the silicon carbide sintered compact comprises the steps of: preparing a slurry mixed powder containing a silicon carbide fine powder; obtaining a tentative formed body by casting the slurry mixed powder into a forming mold and drying; arranging the tentative formed body on the bottom part of a firing furnace through a heat-insulating material; obtaining a calcined body by calcining the tentative formed body at a temperature of ≥1,800°C in an inert gas atmosphere; and obtaining a silicon carbide sintered compact by sintering the calcined body at a maximum temperature of 2,100°C in an inert gas atmosphere. <P>COPYRIGHT: (C)2008,JPO&INPIT |
