| 摘要 |
PROBLEM TO BE SOLVED: To provide an embedded type nitride semiconductor laser device having stable characteristics and a manufacturing method of the same. SOLUTION: After sequentially forming a p-type GaN guide layer 7, an n-type GaN layer 8, and an n-type AlGaN current constriction layer 9 on an active layer 5, a part of the current constriction layer 9 is etched by alkali solution while being irradiated with light, to form an opening part 20. Thereafter, a p-type GaN second guide layer is formed on the current constriction layer 9 so as to cover the opening part 20. Here, energy gap of the GaN layer 8 is smaller than the energy gap of the AlGaN current constriction layer 9. COPYRIGHT: (C)2008,JPO&INPIT
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