发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE |
摘要 |
On a major surface of an n-type silicon carbide inclined substrate (2) is formed an n-type voltage-blocking layer (3) made of silicon carbide by means of epitaxial growth. On the n-type voltage-blocking layer (3) is formed a p-type silicon carbide region (4) rectangular when viewed from above. On the surface of the p-type silicon carbide region (4) is formed a p-type contact electrode (5). In the p-type silicon carbide region (4), the periphery of the p-type silicon carbide region (4) that is parallel with a (11-20) plane (14a) of the silicon carbide crystal, which is liable to cause avalanche breakdown, is located on the short side. In this manner, the dielectric strength of a silicon carbide semiconductor device can be improved.
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申请公布号 |
EP1936695(A1) |
申请公布日期 |
2008.06.25 |
申请号 |
EP20060745609 |
申请日期 |
2006.04.24 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
SUGIMOTO, HIROSHI;MATSUNO, YOSHINORI;OHTSUKA, KENICHI;MIKAMI, NOBORU;KURODA, KENICHI |
分类号 |
H01L21/04;H01L29/04;H01L29/06;H01L29/24;H01L29/861 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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