| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-frequency inductive coupling plasma processing device for uniformly introducing a processing gas into a processing chamber and forming a uniform electric field. <P>SOLUTION: A high-frequency antenna 120 has an inner peripheral part 120b in which a conductor is wound in a spiral shape around a part opposed to the central point of a workpiece as a center, an outer peripheral part 120c in which a conductor disposed with a prescribed space from the inner peripheral part 120b is wound in a spiral shape, and an intermediate part 120d in which a conductor connecting the inner and the outer peripheral parts 120b, 120c is disposed. The inner peripheral part 120b forms an inner peripheral electric field rotating around the central point of a workpiece as an axial center, the outer peripheral part 120c forms an outer peripheral electric field rotating around the central point of the workpiece as the axial center, and the intermediate part 120d forms a reciprocal electric field reciprocating between the inner and the outer peripheral electric fields. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
