| 摘要 |
An image sensor IC is provided to suppress variation in photoelectric conversion characteristic of pixels and obtain the image sensor IC of uniform photoelectric conversion characteristic over the IC. An image sensor IC includes photo diodes, a silicon substrate, a plurality of pixel regions(101,102,103,104), a passivation layer, and a plurality of light transmissive conductors. The plurality of pixel regions have one of the photo diodes, and are disposed on the silicon substrate. The passivation layer is disposed on the plurality of pixel regions. The plurality of light transmissive conductors are disposed on a lower surface of the passivation layer disposed on each of the plurality of pixel regions, and fixed to the same potential. The plurality of conductors include a polycrystalline silicon thin film. The plurality of conductors include an indium tin oxide(ITO) thin film. |
