| 摘要 |
A MOS transistor including a gate insulation layer and a gate electrode layer on a channel region of a semiconductor substrate. A gate spacer layer is formed on a sidewall of the electrode layer and the insulation layer. The transistor includes a deep extended source/drain region, a first source/drain region that is deeper than the extended source/drain region, and a second source/drain region that is shallower than the extended source/drain region.
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