| 摘要 |
A PLZT film ( 30 ) is formed as the material film of a capacitor dielectric film and a top electrode film ( 31 ) is formed on the PLZT film ( 30 ). The top electrode film ( 31 ) comprises two IrO<SUB>x </SUB>films having different composition. Subsequently, back face of a semiconductor substrate ( 11 ) is cleaned and an Ir adhesion film ( 32 ) is formed on the top electrode film ( 31 ). Substrate temperature is set at 400° C. or above at that time. Thereafter, a TiN film and a TEOS film are formed sequentially as a hard mask. In such a method, carbon remaining on the top electrode film ( 31 ) after cleaning the back face is discharged into the chamber while the temperature of the semiconductor substrate ( 11 ) is kept at 400° C. or above in order to form the Ir adhesion film ( 32 ). Consequently, adhesion is enhanced between a TiN film being formed subsequently and the Ir adhesion film ( 32 ) thus preventing the TiN film from being stripped.
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