发明名称 FLASH MEMORY DEVICE AND METHOD FOR CHANGING A BLOCK SIZE USING ADDRESS SHIFTING
摘要 A flash memory device for changing block size using address shifting is provided to change the block size internally, by merging blocks located in different planes and then separating the merged blocks, by shifting least significant bit of a block address to least significant bit of a page address or least significant bit of the page address to least significant bit of the block address. According to a method for changing block size in a flash memory device having a multi-plane structure, an external input address is decoded to a block address and a page address. Block size of the flash memory is changed from a first block size to a second block size, by shifting a bit of the block address to a bit of the page address, or a bit of the page address to a bit of the block address.
申请公布号 KR20080056586(A) 申请公布日期 2008.06.23
申请号 KR20060129664 申请日期 2006.12.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, SANG CHUL;LEE, JIN YUB
分类号 G11C16/04;G11C16/06;G11C16/16 主分类号 G11C16/04
代理机构 代理人
主权项
地址