| 摘要 |
PROBLEM TO BE SOLVED: To provide a flash memory element capable of storing data of one bit or more. SOLUTION: A flash memory element includes: a region 110 doped with first conductivity type impurities; a first polysilicon layer 120 doped with second conductivity type impurities on the region 110 doped with the first conductivity type impurities; a second polysilicon layer 130 doped with first conductivity type impurities on the first polysilicon layer 120; an electron capture layer 140, such as ONO layers, formed on both sides of the first and second polysilicon layers 120, 130; and a control gate 160 formed on the side of the electron capture layer 140. The region 110 doped with the first impurities and the second polysilicon layer 130 form source and drain regions in a vertical structure, respectively. COPYRIGHT: (C)2008,JPO&INPIT
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