发明名称 |
Directionally controlled growth of nanowhiskers |
摘要 |
Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential <111>B direction. As one example, <001> InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults.
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申请公布号 |
US2008142926(A1) |
申请公布日期 |
2008.06.19 |
申请号 |
US20080003988 |
申请日期 |
2008.01.04 |
申请人 |
QUNANO AB |
发明人 |
SEIFERT WERNER;SAMUELSON LARS IVAR;OHLSSON BJORN JONAS;BORGSTROM LARS MAGNUS |
分类号 |
H01L29/20;B01J23/52;C30B11/12;C30B25/00;C30B29/60;C30B29/62 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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