| 摘要 |
The invention relates to a memory device, in particular to a resistively switching memory device such as a Phase Change Random Access Memory ("PCRAM"). In one disclosed method, a nanowire of non-conducting material is formed serving as a mould for producing a nanotube of conducting material. A volume of switching active material is deposited on top of the nanotube, so that the ring-shaped front face of the nanotube couples to the switching active material and thus forms a bottom electrode contact.
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