发明名称 |
MOSFET devices and methods of fabrication |
摘要 |
A vertical MOSFET is disclosed. The MOSFET includes a gate dielectric region, a drift region having a drift region dopant concentration profile of a first conductivity type, and a JFET region having a JFET region dopant concentration profile of the first conductivity type adjacent to the gate dielectric region and disposed over the drift region. The JFET region dopant concentration profile is different from the drift region dopant concentration profile. A method for fabricating a vertical MOSFET is also disclosed.
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申请公布号 |
US2008142811(A1) |
申请公布日期 |
2008.06.19 |
申请号 |
US20060637991 |
申请日期 |
2006.12.13 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
MATOCHA KEVIN SEAN;ROWLAND LARRY BURTON |
分类号 |
H01L29/24;H01L21/336;H01L29/78 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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