HIGH RESISTIVITY THIN FILM COMPOSITION AND FABRICATION METHOD

摘要

A thin film composition is made from silicon, an insulator such as alumina or silicon dioxide, and at least one additional material such as chromium, nickel, boron and/or carbon. These materials are combined to provide a thin film having a p of at least 0.02 O-cm (typically 0.02-1.0 O-cm), and a TCR of less than ±1000 ppm/°C (typically less than ±300 ppm/°C). A sheet resistance of at least 20 kO/O may also be obtained. The resulting thin film is preferably at least 200 A (20nm) thick, to reduce surface scattering conduction currents.