PAD OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

A pad of a semiconductor device and a manufacturing method thereof are provided to prevent crack of a low-k dielectric layer during wire bonding by increasing the thickness of a metal line with good flexibility by forming the metal line in and above a trench which is formed in the low-k dielectric layer. A pad of a semiconductor device comprises a substrate(200), a first metal line(202), a low-k dielectric layer(206) and a second metal line(212). A lower part structure is formed on the semiconductor substrate. The first metal line is formed on the semiconductor substrate. The low-k dielectric covers the first metal line and comprises a trench above the first metal line. The second metal line is formed on the trench and at a part of the low-k dielectric layer adjacent to the trench so as to cover the trench.