HIGH-STABILITY THIN-FILM CAPACITOR AND METHOD FOR MAKING THE SAME

摘要

According to the invention, the dielectric (6) of a capacitor (1) is made by superimposing at least two thin layers (6a, 6b) made of the same metallic oxide respectively in crystalline and amorphous forms and respectively having relative capacity quadratic ratios according to the opposed-signs voltage. The respective thickness d_a and d_c of the amorphous (6b) and crystalline (6a) thin layers correspond to the following general formulae in which: e₀ is the vacuum permittivity, e_c and e_a correspond to the relative permittivity of the metallic oxide respectively in the crystalline and amorphous forms, C_s0 is the zero-field total surface capacity, and ?_c et ?_a correspond to the relative capacity quadratic ratios according to the electric field of the metallic oxide respectively in the crystalline form and in the amorphous form.