| 摘要 |
Methods for preparing three component metal silicon nitride films, which are improved through the cyclic chemical vapor deposition process or the atomic layer deposition process, are provided. A process for depositing a metal silicon nitride on a substrate comprises the steps of: a. contacting a heated substrate with a metal amide to adsorb the metal amide on the heated substrate, wherein the metal amide is selected from the group consisting of tetrakis(dimethylamino)titanium(TDMAT), tetrakis(diethylamino)titanium(TDEAT), tetrakis(ethylmethylamino)titanium(TEMAT), tetrakis(dimethylamino)zirconium(TDMAZ), tetrakis(diethylamino)zirconium(TDEAZ), tetrakis(ethylmethylamino)zirconium(TEMAZ), tetrakis(dimethylamino)hafnium(TDMAH), tetrakis(diethylamino)hafnium(TDEAH), tetrakis(ethylmethylamino)hafnium(TEMAH), tert-butylimino tri(diethylamino)tantalum(TBTDET), tert-butylimino tri(dimethylamino)tantalum(TBTDMT), tert-butylimino tri(ethylmethylamino)tantalum(TBTEMT), ethyllimino tri(diethylamino)tantalum(EITDET), ethyllimino tri(dimethylamino)tantalum(EITDMT), ethyllimino tri(ethylmethylamino)tantalum(EITEMT), tert-amylimino tri(dimethylamino)tantalum(TAIMAT), tert-amylimino tri(diethylamino)tantalum, pentakis(dimethylamino)tantalum, tert-amylimino tri(ethylmethylamino)tantalum, bis(tert-butylimino)bis(dimethylamino)tungsten(BTBMW), bis(tert-butylimino)bis(diethylamino)tungsten, bis(tert-butylimino)bis(ethylmethylamino)tungsten, and mixtures thereof; b. removing non-adsorbed metal amide; c. contacting the heated substrate with a silicon-containing source having one or more Si-H3 fragments to react the silicon-containing source with the adsorbed metal amide on the substrate, wherein the silicon-containing source is selected from the group consisting of di-iso-propylaminosilane(DIPAS), di-tert-butylaminosilane(DTBAS), di-sec-butylaminosilane, di-tert-pentylamino silane, and mixtures thereof; and d. purging the unreacted silicon-containing source.
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