| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photodetector consistent with the fabrication process of Si integrated circuit well, having sensitivity even for a wavelength of 1 μm or more, and operating at a high speed. <P>SOLUTION: The photodetector has a PIN structure where a light absorption layer is composed of Ge and an intrinsic semiconductor layer is composed of Si. In the photodetector 1, an Si semiconductor layer 11 having a polarity, an intrinsic Si semiconductor layer 12 and a Ge semiconductor layer 13 having a polarity reverse to that of the Si semiconductor layer 11 are laminated sequentially. <P>COPYRIGHT: (C)2008,JPO&INPIT |
