| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of obtaining intended threshold values different between a p-type MOSFET and an n-type MOSFET. SOLUTION: The method for manufacturing the semiconductor device related to this invention comprises the steps of: forming a gate insulating film including at least one of Hf, Zr, and Si, O, and N on a semiconductor susbstrate; forming a first and a second gate electrode layer; forming a first metal-contained layer on the first and the second gate electrode layer; forming a second metal-contained layer; forming a protective film; selectively removing the protective film; selectively removing the first and the second metal-contained layer with the left protective film used as a mask; a third metal-contained layer is film formed on the second gate electrode layer with the first and the second metal-contained layer selectively removed; alloying the first gate electrode layer by the heat treatment and alloying the second gate electrode layer; and forming a gate electrode having a different composition. COPYRIGHT: (C)2008,JPO&INPIT
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