发明名称 |
NONVOLATILE MEMORY DEVICES HAVING MULTI-FILAMENT VARIABLE RESISTIVITY MEMORY CELLS THEREIN |
摘要 |
There is provided a resistive memory device, the device including: a plurality of word lines and a plurality of bit lines arranged such that the word lines intersect the bit lines; a plurality of resistive memory cells each having a variable resistive material coupled between the corresponding word line and the corresponding bit line and an access element; selecting circuits selecting one of the plurality of resistive memory cells; and a filament-forming circuit supplying a filament-forming voltage to the selected resistive memory cell through the bit line coupled to the selected resistive memory cell while increasing the filament-forming voltage from a predetermined voltage level until filaments having a predetermined thickness are formed in the variable resistive material of the selected resistive memory cell.
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申请公布号 |
US2008144356(A1) |
申请公布日期 |
2008.06.19 |
申请号 |
US20070945420 |
申请日期 |
2007.11.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH HYUNG-ROK;KANG SANG-BEOM;CHO WOO-YEONG |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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