Method of Impurity Introduction, Impurity Introduction Apparatus and Semiconductor Device Produced with Use of the Method

摘要

An impurity region having a box-shaped impurity profile is formed. An impurity introducing method includes a step of introducing a desired impurity into a surface of a solid base body, and a step of radiating plasma to a surface of the solid base body after the impurity introducing step thus forming an impurity profile having an approximately box-shape.