发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a reliable semiconductor integrated circuit, where damage or stress to a power transistor is reduced by clarifying the route of current flowing to the power transistor and by optimizing current flowing to the power transistor. <P>SOLUTION: The semiconductor integrated circuit has: the power transistor 100A; a plurality of first buses 140-142 formed immediately above the power transistor 100A; a plurality of second buses 150-152; and a contact pad 304 provided in each of the plurality of first and second buses 140-142, 150-152. The plurality of first and second buses 140-142, 150-152 are formed so that the area becomes smaller successively from the buses positioned at a side near an external connection member 307 to those positioned at a distance. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008140973(A) 申请公布日期 2008.06.19
申请号 JP20060325465 申请日期 2006.12.01
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 FUKAMIZU SHINGO
分类号 H01L21/822;H01L21/3205;H01L21/331;H01L21/60;H01L21/8234;H01L23/52;H01L27/04;H01L27/08;H01L27/088;H01L29/732;H01L29/78;H01L29/786 主分类号 H01L21/822
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