发明名称 |
METHOD FOR MANUFACTURING THICK FILM OF GAN |
摘要 |
A method for forming a GaN thick film is provided to suppress a defect due to a lattice mismatch and a difference in thermal expansion coefficients by forming a GaN nanotube with the same density, size, and length on amorphous substrates. A process chamber includes a reaction fuel vaporization region, a mixture gas reaction region, and a nanotube forming region. A temperature of a heat source in the reaction fuel vaporization region lies between 800 and 850°C. A temperature of a heat source in the mixture gas reaction region lies between 900 and 1150°C. A temperature of a heat source in the nanotube forming region lies between 600 and 750°C. An HVPE(Hydride or halide Vapor Phase Epitaxy) vaporization apparatus includes the process chamber. A GaN nanotube is grown on an amorphous substrate by using the HVPE vaporization apparatus, such that a GaN nanotube template is formed. A GaN protective film is grown on the GaN nanotube template. A GaN thick film is grown on the GaN protective film.
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申请公布号 |
KR100839224(B1) |
申请公布日期 |
2008.06.19 |
申请号 |
KR20070029481 |
申请日期 |
2007.03.26 |
申请人 |
DONGGUK UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION |
发明人 |
KWON, YOUNG HAE;RYU, SUNG RYONG;KANG, TAE WON |
分类号 |
H01L21/318 |
主分类号 |
H01L21/318 |
代理机构 |
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