发明名称 |
FORMATION OF IN-SITU PHOSPHORUS DOPED EPITAXIAL LAYER CONTAINING SILICON AND CARBON |
摘要 |
<p>Methods for formation epitaxial layers containing silicon and carbon doped with phosphorus are disclosed. The pressure is maintained equal to or above 100 torr during deposition. The methods result in the formation of a film including substitutional carbon. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices.</p> |
申请公布号 |
WO2008073894(A1) |
申请公布日期 |
2008.06.19 |
申请号 |
WO2007US86984 |
申请日期 |
2007.12.10 |
申请人 |
APPLIED MATERIALS, INC.;KIM, YIHWAN |
发明人 |
KIM, YIHWAN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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