| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for forming a slot whose upper part is rounded by dry etching with a semiconductor material, utilizing the gas containing no carbon. SOLUTION: A semiconductor substrate comprising a bottomed slot 30 is manufactured. Firstly, a semiconductor material 10 is prepared which comprises a masked region 10b which is covered with a mask 20 containing semiconductor material carbon and a non-masked region 10c which is not covered with the mask. By supplying the gas that contains no carbon toward both the mask 20 and the non-masked region 10c, the bottomed slot 30 that extends from the non-masked region 10c toward the inside of the semiconductor material 10 is formed. COPYRIGHT: (C)2008,JPO&INPIT
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