| 摘要 |
In an element structure of a nitride semiconductor light emitting element, the laminate including a light emitting part having a laminate structure of a first n-type layer 13 , a p-type clad layer 15 and an active layer 14 sandwiched between them, and a second n-type layer 16 present at the outer side of the light emitting part and at the p-type clad layer side. When the laminate is to be grown on a substrate 11 , the light emitting part has the p-type clad layer 15 placed on the upper side of the second n-type layer 16 is placed on the further upper side of the light emitting part. The second n-type layer 16 is dry-etched to form an exposed surface. An electrode P 12 is formed on the surface exposed by dry etching, whereby the electrode P 12 becomes a p-side electrode having a low contact resistance, which is used for injecting a hole in the p-type clad layer 15 of the aforementioned light emitting part, even if the electrode P 12 is formed in the n-type layer 16.
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