| 摘要 |
A plurality of trenches are provided in a semiconductor layer and integrated by thermal oxidation to form an insulating region having void parts therein. The thickness of the insulating region can be controlled by the depth of the trenches. This makes it possible to form the insulating region having a thickness larger than that formed by using a conventional LOCOS method, without increasing crystal defects and the like. By providing the insulating region, for example, below an electrode pad, a stray capacitance can be reduced. Moreover, the stray capacitance can be further reduced by the void parts inside the insulating region.
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