发明名称 Method of manufacturing thin film transistor and method of manufacturing liquid crystal display device using the same
摘要 A method of manufacturing a thin film transistor includes: forming a gate insulating layer on a substrate having a gate electrode; forming a semiconductor layer of nanomaterial on the gate insulating layer; forming a source electrode and a drain electrode on the gate insulating layer; and applying a voltage to the source electrode and the drain electrode to arrange a direction of the nanomaterial.
申请公布号 US2008138940(A1) 申请公布日期 2008.06.12
申请号 US20070000078 申请日期 2007.12.07
申请人 LEE BO HYUN;MOON TAE HYOUNG 发明人 LEE BO HYUN;MOON TAE HYOUNG
分类号 H01L21/02;H01L29/786 主分类号 H01L21/02
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