发明名称 |
Method of manufacturing thin film transistor and method of manufacturing liquid crystal display device using the same |
摘要 |
A method of manufacturing a thin film transistor includes: forming a gate insulating layer on a substrate having a gate electrode; forming a semiconductor layer of nanomaterial on the gate insulating layer; forming a source electrode and a drain electrode on the gate insulating layer; and applying a voltage to the source electrode and the drain electrode to arrange a direction of the nanomaterial.
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申请公布号 |
US2008138940(A1) |
申请公布日期 |
2008.06.12 |
申请号 |
US20070000078 |
申请日期 |
2007.12.07 |
申请人 |
LEE BO HYUN;MOON TAE HYOUNG |
发明人 |
LEE BO HYUN;MOON TAE HYOUNG |
分类号 |
H01L21/02;H01L29/786 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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