| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device in which deterioration in characteristics of a ferroelectric capacitor due to oxidization of a plug can prevented, and etching damage of the ferroelectric capacitor can be prevented in machining an oxygen barrier film, and to provide a manufacturing method thereof. SOLUTION: The ferroelectric memory device 1 is provided with an oxygen barrier film 13 provided on a substrate 2 and connected to a plug 18 buried in the substrate 2; and the ferroelectric capacitor 3 comprising a lower electrode 14, a ferroelectric film 15 and an upper electrode 16 which are provided on the oxygen barrier film 13. The oxygen barrier film 13 is formed so as to spread over the side of the ferroelectric capacitor 3. A sidewall 20 made of an insulating material having etching resistance higher than that of the oxygen barrier film 13 is formed on the oxygen barrier film 13 and both the sides of the side surface of the ferroelectric capacitor 3. COPYRIGHT: (C)2008,JPO&INPIT
|
