| 摘要 |
PROBLEM TO BE SOLVED: To provide a bipolar semiconductor device having a low-concentration region in which preferable specific resistance value distribution is formed as a result of the formation of a crystal defect. SOLUTION: An IGBT10 has a p type collector region 14, an n<SP>+</SP>type emitter region 24, an n<SP>-</SP>type drift region 18, and the like. A hole is supplied to the n<SP>-</SP>type drift region 18 from the p type collector region 14 when the IGBT10 is turned on and the n<SP>+</SP>type emitter region 24 and an electron is supplied thereto when it is turned off, so that a conductivity modulation phenomenon is generated in the n<SP>-</SP>type drift region 18. In the n<SP>-</SP>type drift region 18, the crystal defect is formed with nearly uniform density. As a result, the n<SP>-</SP>type drift region 18 has a nearly constant specific resistance value distribution higher than that before crystal defect formation. COPYRIGHT: (C)2008,JPO&INPIT
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