| 摘要 |
A CMOS image sensor and a manufacturing method thereof are provided to prevent a defect on a protective film due to a thermal expansion by blocking incident light, which is received from a peripheral driving unit. A semiconductor substrate(200) includes a sensing portion and a peripheral driving portion. Plural photodiodes are formed in the sensing portion. A transistor(202) outputs signals from the photodiodes. Plural metal lines(M1-M4) and interlayer dielectrics(203,204,206,207) are formed on the semiconductor substrate. A color filter layer(210) and a microlens(211) are formed in the sensing portion of the semiconductor substrate. A tungsten plug is connected to an uppermost metal line, which is formed in a peripheral driving portion of a semiconductor substrate. The tungsten plug is arranged in the interlayer dielectric at the same level as the uppermost metal line. A protective film(209) is formed on the tungsten plug.
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