METHOD OF MANUFACTURING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser, in which the adhesiveness is improved, deterioration at the end face part is suppressed, operation current increases extremely little during energization, and the life is significantly improved, when an end face coat film is formed on an edge face of a resonator formed by processing a nitride III-V compound semiconductor. SOLUTION: In the semiconductor laser using the nitride III-V compound semiconductor, the end face coat film 20 is formed in the edge face 18 of the resonator formed by cleavage etc. via an adhesion layer. The adhesion layer is at least one element selected from the group consisting of Al, Ti, Zr, Hf, Ta, Zn and Si, or a substance containing at least one element selected from the group consisting of Al, Ti, Zr, Hf, Ta, Zn and Si, and oxygen and/or nitrogen, for example, AlOxfilm etc. The lowest layer of the end face coat film 20 is the Al2O3film. COPYRIGHT: (C)2008,JPO&INPIT