| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a resistive memory element containing a dopant, and to provide a method for manufacturing the same. <P>SOLUTION: The resistive memory element containing the dopant has a lower electrode, a resistive layer containing the dopant formed on the lower electrode, and an upper electrode formed on the resistive layer. The lower electrode or the upper electrode is formed of a metal or a metal oxide. The metal contains at least one substance from among Al, Hf, Zr, Zn, W, Co, Au, Pt, Ru, Ir or Ti. Accordingly, this makes it possible to obtain the memory element which is high in reliability, wherein the voltage and resistive characteristics are stabilized. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
