发明名称 Semiconductor mask and method of making same
摘要 A method of making a semiconductor device is disclosed. A target mask pattern is provided which includes features to be exposed on the mask, and features to be non-exposed on the mask. The to be exposed features are fractured by searching for geometries on the target mask pattern that meet one or more conditions, identifying mask pattern structures to be fractured, fracturing the identified pattern structures according to a fracture instruction list, creating a set of mask exposure patterns, exposing the mask to the mask exposure pattern, and developing the mask.
申请公布号 US2008141212(A1) 申请公布日期 2008.06.12
申请号 US20060635322 申请日期 2006.12.07
申请人 HAFFNER HENNING 发明人 HAFFNER HENNING
分类号 G06F17/50 主分类号 G06F17/50
代理机构 代理人
主权项
地址
您可能感兴趣的专利