SEMICONDUCTOR PACKAGE, CORE LAYER MATERIAL, BUILDUP LAYER MATERIAL, AND ENCAPSULATION RESIN COMPOSITION

摘要

Disclosed is a flip chip semiconductor package comprising a circuit board having a core layer and at least one buildup layer, a semiconductor device connected to the circuit board through a metal bump, and a cured product of an encapsulation resin composition which is sealingly interposed between the semiconductor device and the circuit board. The flip chip semiconductor package is characterized in that the cured product of the encapsulation resin composition has a linear expansion coefficient of not less than 15 ppm/°C but not more than 35 ppm/°C between 25°C and 75°C, and at least one of the buildup layers has a glass transition temperature of not less than 170°C and an in-plane linear expansion coefficient of not more than 25 ppm between 25°C and 75°C. Consequently, a flip chip semiconductor package with high reliability can be obtained by suppressing cracks and separation. Also disclosed are a buildup layer material, a core layer material and an encapsulation resin composition.