发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To speed up operation by enabling sensing of a memory cell always with same timing independently of distance from a row decoder to a sense amplifier. SOLUTION: Word lines are connected to memory cells arranged in the row direction, and row decoders 13-0 to 13-N are connected to the word lines. Bit lines LBL0, BLBL0 to LBLM, BLBLM are connected to the memory cells arranged in the column direction, and sense amplifiers 12-0 to 12-M are connected to these bit lines. Dummy cells are arranged between the row decoder and the memory cell array in the column direction and dummy bit lines are connected to dummy cells. An array control signal activating the sense amplifier is transmitted to the sense amplifier through a signal wiring LSA in accordance with output from the dummy bit line by a local sense activating circuit 16. The constitution is set so that signal delay of the word line and signal delay of the signal wiring LSA become the same. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008135116(A) 申请公布日期 2008.06.12
申请号 JP20060320352 申请日期 2006.11.28
申请人 TOSHIBA CORP 发明人 IMAI KIMIMASA
分类号 G11C11/41;G11C11/419 主分类号 G11C11/41
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