| 摘要 |
PROBLEM TO BE SOLVED: To obtain a silicon carbide semiconductor device, having a small amount of loss in continuity with satisfactory reproducibility without causing enlargement of the device. SOLUTION: There are provided a first metal arrangement process for arranging first metal particles 21P, forming a first conductivity-type region 4 and an ohmic contact on the surface of a semiconductor layer 20, where first/second conductivity-type regions 4, 5 are formed at a surface layer section; a first metal alloy process for allowing the first metal to react to the semiconductor layer 20 to generate a first alloy 9a; a second metal film formation process for forming a second metal film 22M, forming a second conductivity-type region 5 and the ohmic contact on the surface of the semiconductor layer 20; and a composite alloy layer formation process for allowing the second metal abutting against the semiconductor layer 20 to be made to react with the semiconductor layer 20 for generating a second alloy 9b to form a composite alloy layer 9, where the first alloy 9a is mixed with the second alloy 9b on the surface of the semiconductor layer 20. COPYRIGHT: (C)2008,JPO&INPIT
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