发明名称 |
Plasma Processing Apparatus |
摘要 |
A dry etching apparatus comprises: a vacuum chamber where a processing target is disposed on a bottom wall side of an internal space; a coil for generating plasma that is disposed above and outside the vacuum chamber and has conductors disposed so that a gap is formed in a plane view; a top wall that closes the top of the internal space and has a transparent section at a position corresponding to the gap between conductors of the coil 36 in the plane view; and a camera that is disposed above the coil and can capture at least a part of the processing target in a field of view through the gap and the transparent section. The status of the processing target during plasma processing can be observed in real-time.
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申请公布号 |
US2008138993(A1) |
申请公布日期 |
2008.06.12 |
申请号 |
US20050794306 |
申请日期 |
2005.12.06 |
申请人 |
HIROSHIMA MITSURU;MIYAKE SUMIO;OKUNE MITSUHIRO;WATANABE SHOZOH;SUZUKI HIROYUKI |
发明人 |
HIROSHIMA MITSURU;MIYAKE SUMIO;OKUNE MITSUHIRO;WATANABE SHOZOH;SUZUKI HIROYUKI |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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