| 摘要 |
In a semiconductor device provided by preventing connection failure caused by misalignment of a semiconductor element having fine and narrow-pitched bumps, a guide for preventing the misalignment is formed by an insulating resin layer around a connection electrode. The insulating resin layer has a thickness defined in relation to an angle theta formed by a side wall of the opening and alignment accuracy delta for the bump. Specifically, the thickness of the insulating resin layer may be delta tan theta or more.
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