| 摘要 |
<p>A semiconductor device is provided to restrain a short channel effect by making a channel have a length 10-39 times as great as the thickness of a semiconductor layer or by making the channel have a length not less than 100 nm and less than 1000 nm. A semiconductor layer(14) having a thickness of 10-25 nm is formed on an insulation surface of a semiconductor device. A gate insulation layer(16) having a thickness of 2-20 nm is formed on the semiconductor layer. A gate electrode(25) is formed on the gate insulation layer. The channel length is 10-39 times as great as the thickness of the semiconductor layer. The threshold voltage is not less than 0.01 V and less than 0.62 V, and the sub threshold voltage is not less than 60 mV/decade and less than 100 mV/decade. The gate insulation layer can be made of a silicon oxide layer or a stack structure of a silicon oxide layer and a silicon nitride layer.</p> |
