SEMICONDUCTOR DEVICES INCLUDING A GETTING REGION AND METHODS OF FORMING THE SAME

摘要

A semiconductor device having a gettering region and a manufacturing method thereof are provided to improve integration density of the semiconductor device by minimizing a metal contamination of an IC formed on a semiconductor layer. A semiconductor device includes a semiconductor substrate(100), an insulation layer(150), a device semiconductor layer(200), and at least one gettering region(165). The insulation layer is arranged on the semiconductor substrate. The device semiconductor layer is arranged on the insulation layer. The gettering region includes plural sites for capturing metal elements in the device semiconductor layer. The gettering region is arranged in the insulation layer. The gettering region is arranged in a charge semiconductor pattern inside the insulation layer. The charge semiconductor pattern is contacted with a lower surface of the device semiconductor layer.