| 摘要 |
A method for manufacturing a metal contact in a semiconductor device is provided to reduce contact resistance by maximizing a contact area between the metal contact and a metal wire. A metal wire(302) having TiN is formed on the top of a substrate(301). First and second dielectric layers(303,304) are formed on the metal wire. An open section passes through the first and second dielectrics. A lower width of the open section is wider than an upper width thereof. A conductive material is gap-filled in the open section to form a contact plug. The first dielectric layer is made of an oxide layer. The second dielectric layer is made of a nitride layer. The oxide layer is an HSQ(Hydrogen Silsesquiozane) oxide layer. When the open section is formed, a photoresist layer pattern is formed on the second dielectric layer. The second dielectric layer is etched with the photoresist pattern. The first dielectric layer is etched with the second dielectric layer in the condition of having an etching selectivity as the first dielectric layer. A buffer oxide layer is formed on the second dielectric layer. A part of the TiN is etched with the buffer oxide layer to form the open section. A width of the open section located on the first dielectric layer is increased.
|
